| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FT1008BH | 200 V, 10 mA logic level TRIAC | distributor | - | 3 | -40°C | 125°C | 144 K |
| IDT70T631S008BC | High-speed 2.5V 256 x 18 asynchronous dual-port static RAM, 8ns | Integrated-Device-Technology-Inc- | BGA | 256 | 0°C | 70°C | 342 K |
| IDT70T633S008BC | High-speed 2.5V 512 x 18 asynchronous dual-port static RAM, 8ns | Integrated-Device-Technology-Inc- | BGA | 256 | 0°C | 70°C | 342 K |
| IDT70T633S008BF | High-speed 2.5V 512 x 18 asynchronous dual-port static RAM, 8ns | Integrated-Device-Technology-Inc- | fpBGA | 208 | 0°C | 70°C | 342 K |
| IDT70T651S008BC | High-speed 2.5V 256 x 36 asynchronous dual-port static RAM, 8ns | Integrated-Device-Technology-Inc- | BGA | 256 | 0°C | 70°C | 344 K |
| IDT70T651S008BF | High-speed 2.5V 256 x 36 asynchronous dual-port static RAM, 8ns | Integrated-Device-Technology-Inc- | fpBGA | 208 | 0°C | 70°C | 344 K |
| IDT70T659S008BC | High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 8ns | Integrated-Device-Technology-Inc- | BGA | 256 | 0°C | 70°C | 344 K |
| IDT70T659S008BF | High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 8ns | Integrated-Device-Technology-Inc- | fpBGA | 208 | 0°C | 70°C | 344 K |
| TXD20008BAFLLNH | 2000 watt. AC/DC power supply. Output voltage module A: 12.0V, output voltage module B: 5V. | distributor | - | 10 | 0°C | 70°C | 202 K |
| TXD20008BJFLLNH | 2000 watt. AC/DC power supply. Output voltage module A: 12.0V, output voltage module B: 20.0V. | distributor | - | 10 | 0°C | 70°C | 202 K |
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