Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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DG200ABK | Dual monolithic SPST CMOS analog swith | Maxim-Integrated-Producs | CERDIP | 14 | -25°C | 85°C | 179 K |
DG200ACJ | Dual monolithic SPST CMOS analog swith | Maxim-Integrated-Producs | Plastic DIP | 14 | 0°C | 70°C | 179 K |
DG200ACK | Dual monolithic SPST CMOS analog swith | Maxim-Integrated-Producs | CERDIP | 14 | 0°C | 70°C | 179 K |
DG200ACY | Dual monolithic SPST CMOS analog swith | Maxim-Integrated-Producs | SO | 14 | 0°C | 70°C | 179 K |
DG200ADJ | Dual monolithic SPST CMOS analog swith | Maxim-Integrated-Producs | Plastic DIP | 14 | -40°C | 85°C | 179 K |
FD1500AU-240 | Thyristor for high voltage, high power, general use, dynamic gate, press pack type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -20°C | 125°C | 41 K |
FD1500AV-90 | High-frequency rectifier diode for high power, high frequency, press pack type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 125°C | 51 K |
FG3300AH-50DA | Gate turn-off thyristor for high power inverter use press pack type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 125°C | 73 K |
FG6000AU-120D | Gate turn-off thyristor for high power inverter use press pack type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 125°C | 59 K |
IS42S32200A-5TI | 512M bits x 32 bits x 4 banks(64-MBIT)synchronous graphics RAM | distributor | TSOP | 86 | -40°C | 85°C | 628 K |
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