| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| RM100D2Z-40 | 100A - transistor module for high voltage medium power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 150°C | 44 K |
| RM100DZ-24 | 100A - transistor module for high power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 150°C | 45 K |
| RM100DZ-2H | 100A - transistor module for high power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 150°C | 45 K |
| RM100DZ-2H | 100A - transistor module for high power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 150°C | 45 K |
| RM100DZ-H | 100A - transistor module for high power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 150°C | 44 K |
| RM100DZ-M | 100A - transistor module for high power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 150°C | 44 K |
| RM500DZ-24 | 800A - transistor module for high power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 51 K |
| RM500DZ-2H | 800A - transistor module for high power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 51 K |
| RM500DZ-M | 800A - transistor module for high power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 51 K |
| TM400DZ-M | 400A - transistor module for medium power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 8 | -40°C | 150°C | 61 K |
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