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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
3EZ200D5200 V, 3 W, silicon zener diodedistributor-2-55°C175°C37 K
3EZ300D5300 V, 3 W, silicon zener diodedistributor-2-55°C175°C37 K
3EZ400D5400 V, 3 W, silicon zener diodedistributor-2-55°C175°C37 K
SB10100DCDDPak surfase schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current at Tc = 100degC 10 A.distributor-3-50°C125°C46 K
SB16100DCDDPak surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current at Tc = 90degC 16.0 A.distributor-3-50°C150°C56 K
SB8100DCDDPak surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current at Ta = 100degC 8 A.distributor-4-50°C150°C46 K
TMS44400DJ-601048576-word by 4-bit dynamic random-access memories, 60 ns, 5.0VTexas-InstrumentsSOJ200°C70°C657 K
TMS46400DGA-701048576-word by 4-bit dynamic random-access memories, 70 ns, 3.3V, low powerTexas-InstrumentsTSOP200°C70°C657 K
TMS46400DGA-801048576-word by 4-bit dynamic random-access memories, 80 ns, 3.3V, low powerTexas-InstrumentsTSOP200°C70°C657 K
TMS46400DGA-801048576-word by 4-bit dynamic random-access memories, 80 ns, 3.3V, low powerTexas-InstrumentsTSOP200°C70°C657 K
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