| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF1010E | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A. | International-Rectifier | - | 3 | -55°C | 175°C | 195 K |
| IRF1010EL | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A. | International-Rectifier | - | 3 | -55°C | 175°C | 123 K |
| IRF1010ES | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A. | International-Rectifier | DDPak | 3 | -55°C | 175°C | 123 K |
| IRF1010N | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A. | International-Rectifier | - | 3 | -55°C | 175°C | 211 K |
| IRF1010NL | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A. | International-Rectifier | - | 3 | -55°C | 175°C | 146 K |
| IRF1010NS | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A. | International-Rectifier | DDPak | 3 | -55°C | 175°C | 146 K |
| IRFI1010N | HEXFET power MOSFET. VDSS =55V, RDS(on) = 0.012 Ohm, ID = 49 A | International-Rectifier | - | 3 | -55°C | 175°C | 109 K |
| MA40105-276 | 9.375 GHz, Stripline packaged schottky mixer diode | M-A-COM---manufacturer-of-RF | - | - | -65°C | 150°C | -- |
| MA40108 | 10 GHz, Schottky detector diode | M-A-COM---manufacturer-of-RF | - | - | -65°C | 125°C | -- |
| MASW6010G | DC-6 GHz GaAs SPDT switch | M-A-COM---manufacturer-of-RF | - | - | -55°C | 85°C | 90 K |
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