Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BS616UV8011BC | 70/100ns 15-20mA 1.8-2.3V ultra low power/voltage CMOS SRAM 512K x 16bit | distributor | BGA | 48 | 0°C | 70°C | 221 K |
HCF4011BEY | Quad 2 input NAND gate | SGS-Thomson-Microelectronics | DIP | 14 | -40°C | 85°C | 287 K |
NX25F011B-3S | 3 V, 1M-bit flash memory with 4-pin SPI interface | distributor | SOIC | 8 | 0°C | 70°C | 549 K |
NX25F011B-3S-R | 3 V, 1M-bit flash memory with 4-pin SPI interface | distributor | SOIC | 8 | 0°C | 70°C | 549 K |
NX25F011B-3V | 3 V, 1M-bit flash memory with 4-pin SPI interface | distributor | TSOP | 28 | 0°C | 70°C | 549 K |
NX25F011B-3V-R | 3 V, 1M-bit flash memory with 4-pin SPI interface | distributor | TSOP | 28 | 0°C | 70°C | 549 K |
NX25F011B-5S | 5 V, 1M-bit flash memory with 4-pin SPI interface | distributor | SOIC | 8 | 0°C | 70°C | 549 K |
NX25F011B-5S-R | 5 V, 1M-bit flash memory with 4-pin SPI interface | distributor | SOIC | 8 | 0°C | 70°C | 549 K |
NX25F011B-5V | 5 V, 1M-bit flash memory with 4-pin SPI interface | distributor | TSOP | 28 | 0°C | 70°C | 549 K |
NX25F011B-5V-R | 5 V, 1M-bit flash memory with 4-pin SPI interface | distributor | TSOP | 28 | 0°C | 70°C | 549 K |
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