Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1N6012B | 500 milliwatts glass silicon zener diode, zener voltage 33V | Motorola | - | 2 | -65°C | 200°C | 424 K |
CS3012-IS | Precision low voltage amplifier: DC to 1kHz | Cirrus-Logic | SOIC | 8 | -40°C | 85°C | 131 K |
ME501206 | 1200V, 60A general purpose 3-phase bridge diode | distributor | - | - | - | - | 67 K |
ME501210 | 1200V, 100A general purpose 3-phase bridge diode | distributor | - | - | - | - | 68 K |
ME601215 | 1200V, 150A general purpose 3-phase bridge diode | distributor | - | - | - | - | 463 K |
ME701202 | 1200V, 20A general purpose 3-phase bridge diode | distributor | - | - | - | - | 75 K |
ME701203 | 1200V, 30A general purpose 3-phase bridge diode | distributor | - | - | - | - | 76 K |
R5001210XXWA | 1200V, 100A general purpose single diode | distributor | - | - | - | - | 502 K |
SL4012BD | Dual 4-input NAND gate. High-voltage silicon-gate CMOS. | distributor | SOIC | 14 | -55°C | 125°C | 30 K |
SL4012BN | Dual 4-input NAND gate. High-voltage silicon-gate CMOS. | distributor | DIP | 14 | -55°C | 125°C | 30 K |
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