| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IDT70T651S012DR | High-speed 2.5V 256 x 36 asynchronous dual-port static RAM, 12ns | Integrated-Device-Technology-Inc- | PQFP | 208 | 0°C | 70°C | 344 K |
| IDT70T651S012DRI | High-speed 2.5V 256 x 36 asynchronous dual-port static RAM, 12ns | Integrated-Device-Technology-Inc- | PQFP | 208 | -40°C | 85°C | 344 K |
| IDT70T659S012BC | High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 12ns | Integrated-Device-Technology-Inc- | BGA | 256 | 0°C | 70°C | 344 K |
| IDT70T659S012BCI | High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 12ns | Integrated-Device-Technology-Inc- | BGA | 256 | -40°C | 85°C | 344 K |
| IDT70T659S012BF | High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 12ns | Integrated-Device-Technology-Inc- | fpBGA | 208 | 0°C | 70°C | 344 K |
| IDT70T659S012BFI | High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 12ns | Integrated-Device-Technology-Inc- | fpBGA | 208 | -40°C | 85°C | 344 K |
| IDT70T659S012DR | High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 12ns | Integrated-Device-Technology-Inc- | PQFP | 208 | 0°C | 70°C | 344 K |
| IDT70T659S012DRI | High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 12ns | Integrated-Device-Technology-Inc- | PQFP | 208 | -40°C | 85°C | 344 K |
| Q2012RH5 | Alternistor triac, 12A, 200 Volt | distributor | - | 3 | -40°C | 125°C | 536 K |
| Q4012RH5 | Alternistor triac, 12A, 400 Volt | distributor | - | 3 | -40°C | 125°C | 536 K |
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