| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2025-6012-20 | 2-8.4 GHz, directional coupler multi-octave | M-A-COM---manufacturer-of-RF | - | - | - | - | 155 K |
| DB1012S | Single-phase glass passivated silicon bridge rectifier. MaxVRRM = 1200V, maxVRMS = 840V, maxVDC = 1200V. Current 1.0A. | distributor | - | 4 | -65°C | 150°C | 21 K |
| GMS30120 | Program memory: 1024 bytes, 300KHz-1MHz, 2-4 V, 4 BIT single chip microcomputer | distributor | SOP | 24 | -20°C | 70°C | 972 K |
| MA40126 | 9.375 GHz, Stripline packaged schottky mixer diode | M-A-COM---manufacturer-of-RF | - | - | -65°C | 150°C | -- |
| MAALSS0012-3000 | 200-3000 MHz miniature broadband gain stage | M-A-COM---manufacturer-of-RF | SOT | 6 | -40°C | 85°C | 114 K |
| MAALSS0012SMB | 200-3000 MHz miniature broadband gain stage | M-A-COM---manufacturer-of-RF | SOT | 6 | -40°C | 85°C | 114 K |
| MAALSS0012TR | 200-3000 MHz miniature broadband gain stage | M-A-COM---manufacturer-of-RF | SOT | 6 | -40°C | 85°C | 114 K |
| MAFRIN0124 | 869-894 MHz, drop-in high power isolator | M-A-COM---manufacturer-of-RF | - | - | -30°C | 85°C | 83 K |
| MAFRIN0125 | 925-960 MHz, drop-in high power isolator | M-A-COM---manufacturer-of-RF | - | - | -30°C | 85°C | 83 K |
| MRF10120 | 120 W, microwave power transistor NPN silicon | M-A-COM---manufacturer-of-RF | - | 3 | - | - | 128 K |
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