| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IDT70125L45J | High-speed 2K*9 dual-port static ram with busy & interrurt | Integrated-Device-Technology-Inc- | PLCC | 52 | 0°C | 70°C | 168 K |
| IDT70125L55J | High-speed 2K*9 dual-port static ram with busy & interrurt | Integrated-Device-Technology-Inc- | PLCC | 52 | 0°C | 70°C | 168 K |
| MAFRIN0125 | 925-960 MHz, drop-in high power isolator | M-A-COM---manufacturer-of-RF | - | - | -30°C | 85°C | 83 K |
| MC10125FN | Quad MELC to TTL translator | Motorola | PLCC | 20 | - | - | 127 K |
| MC10125L | Quad MELC to TTL translator | Motorola | DIP | 16 | - | - | 127 K |
| MC10125L | Quad MELC to TTL translator | Motorola | DIP | 16 | - | - | 127 K |
| MC10125P | Quad MELC to TTL translator | Motorola | Plastic | 16 | - | - | 127 K |
| ML60125R | High power AlGaAs semiconductor laser diode for optical information systems | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 60°C | 87 K |
| PTB20125 | 100 watts, 1.8-2.0 GHz PCN/PCS power transistor | Ericsson-Microelectronics | 20225 | 5 | - | - | 235 K |
| PTF10125 | 135 watts, 1.4-1.6 GHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20250 | 5 | - | - | 291 K |
| [1] 2 [3] |
|---|
