| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| PGT20130 | 1510 nm DFB laser for supervisory channel applications | Ericsson-Microelectronics | - | 14 | 0°C | 70°C | 828 K |
| PTB20134 | 30 watts,860-900 MHz cellular radio RF power transistor | Ericsson-Microelectronics | 20201 | 3 | - | - | 42 K |
| PTB20135 | 85 watts,925-960 MHz cellular radio RF power transistor | Ericsson-Microelectronics | 20216 | 3 | - | - | 47 K |
| PTF10133 | 85 watts, 860-960 MHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20248 | 3 | - | - | 177 K |
| PTF10134 | 100 watts, 2.1-2.2 GHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20250 | 5 | - | - | 318 K |
| PTF10135 | 5 watts, 2.0 GHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20249 | 3 | - | - | 245 K |
| PTF10136 | 6 watts, 1.0 GHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20244 | 2 | - | - | 205 K |
| PTF10137 | 12 watts, 1.0 GHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20244 | 2 | - | - | 175 K |
| PTF10138 | 60 watts, 860-960 MHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20256 | 2 | - | - | 106 K |
| PTF10139 | 60 watts, 860-960 MHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20256 | 2 | - | - | 115 K |
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