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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
1N6014B500 milliwatts glass silicon zener diode, zener voltage 39VMotorola-2-65°C200°C424 K
LT1014CJQuad precision operational amplifierLinear-TechnologyCERDIP140°C70°C545 K
LT1014DNQuad precision operational amplifierLinear-TechnologyPDIP140°C70°C545 K
LT1014DSQuad precision operational amplifierLinear-TechnologySOIC160°C70°C545 K
LT1014DSQuad precision operational amplifierLinear-TechnologySOIC160°C70°C545 K
TC1014-2.5VCT50mA CMOS LDO with shutdown and reference bypass. Output voltage 2.5V.TelCom-Semiconductor-Inc--5-40°C125°C109 K
TC1014-2.7VCT50mA CMOS LDO with shutdown and reference bypass. Output voltage 2.7V.TelCom-Semiconductor-Inc--5-40°C125°C109 K
TC1014-3.0VCT50mA CMOS LDO with shutdown and reference bypass. Output voltage 3.0V.TelCom-Semiconductor-Inc--5-40°C125°C109 K
TC1014-3.3VCT50mA CMOS LDO with shutdown and reference bypass. Output voltage 3.3V.TelCom-Semiconductor-Inc--5-40°C125°C109 K
TC1014-5.0VCT50mA CMOS LDO with shutdown and reference bypass. Output voltage 5.0V.TelCom-Semiconductor-Inc--5-40°C125°C109 K
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