Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1N6014B | 500 milliwatts glass silicon zener diode, zener voltage 39V | Motorola | - | 2 | -65°C | 200°C | 424 K |
LT1014CJ | Quad precision operational amplifier | Linear-Technology | CERDIP | 14 | 0°C | 70°C | 545 K |
LT1014DN | Quad precision operational amplifier | Linear-Technology | PDIP | 14 | 0°C | 70°C | 545 K |
LT1014DS | Quad precision operational amplifier | Linear-Technology | SOIC | 16 | 0°C | 70°C | 545 K |
LT1014DS | Quad precision operational amplifier | Linear-Technology | SOIC | 16 | 0°C | 70°C | 545 K |
TC1014-2.5VCT | 50mA CMOS LDO with shutdown and reference bypass. Output voltage 2.5V. | TelCom-Semiconductor-Inc- | - | 5 | -40°C | 125°C | 109 K |
TC1014-2.7VCT | 50mA CMOS LDO with shutdown and reference bypass. Output voltage 2.7V. | TelCom-Semiconductor-Inc- | - | 5 | -40°C | 125°C | 109 K |
TC1014-3.0VCT | 50mA CMOS LDO with shutdown and reference bypass. Output voltage 3.0V. | TelCom-Semiconductor-Inc- | - | 5 | -40°C | 125°C | 109 K |
TC1014-3.3VCT | 50mA CMOS LDO with shutdown and reference bypass. Output voltage 3.3V. | TelCom-Semiconductor-Inc- | - | 5 | -40°C | 125°C | 109 K |
TC1014-5.0VCT | 50mA CMOS LDO with shutdown and reference bypass. Output voltage 5.0V. | TelCom-Semiconductor-Inc- | - | 5 | -40°C | 125°C | 109 K |
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