| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N3019CSM | 80V Vce, 1A Ic, 100MHz NPN bipolar transistor | Semelab-Plc- | LCC1 | - | - | - | 19 K |
| D1019UK | 28V, 20W, 1MHz-175MHz single-edded RF | Semelab-Plc- | DW | - | - | - | 37 K |
| D2019UK | 28V, 2.5W, 1HMz-1GHz single-edded RF | Semelab-Plc- | S08 | - | - | - | 16 K |
| MX019TN | Quad digital control amplifier | MX-COM-Inc- | TSSOP | 24 | -40°C | 85°C | 109 K |
| PTB20190 | 175 watts, 470-806 MHz digital television power transistor | Ericsson-Microelectronics | 20224 | 5 | - | - | 549 K |
| PTB20191 | 12 watts, 1.78-1.92 GHz RF power transistor | Ericsson-Microelectronics | 20226 | 6 | - | - | 424 K |
| PTB20193 | 60 watts, 1.8-1.9 GHz cellular radio RF power transistor | Ericsson-Microelectronics | 20223 | 3 | - | - | 519 K |
| PTB20195 | 150 watts, 860-900 MHz cellular radio RF power transistor | Ericsson-Microelectronics | 20224 | 5 | - | - | 47 K |
| PTF10193 | 12 watts, 860-960 MHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20259 | 3 | - | - | 331 K |
| PTF10195 | 125 watts, 869-894 MHz GOLDMOS field effect transistor | Ericsson-Microelectronics | 20248 | 3 | - | - | 328 K |
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