| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N6019B | 500 milliwatts glass silicon zener diode, zener voltage 62V | Motorola | - | 2 | -65°C | 200°C | 424 K |
| GS816019T-133 | 133MHz 1M x 18 synchronous SRAM | distributor | TQFP | 100 | -40°C | 85°C | 901 K |
| GS816019T-150 | 150MHz 1M x 18 synchronous SRAM | distributor | TQFP | 100 | -40°C | 85°C | 901 K |
| GS816019T-166 | 166MHz 1M x 18 synchronous SRAM | distributor | TQFP | 100 | -40°C | 85°C | 901 K |
| GS816019T-200 | 200MHz 1M x 18 synchronous SRAM | distributor | TQFP | 100 | -40°C | 85°C | 901 K |
| GS816019T-225 | 225MHz 1M x 18 synchronous SRAM | distributor | TQFP | 100 | -40°C | 85°C | 901 K |
| GS816019T-250 | 250MHz 1M x 18 synchronous SRAM | distributor | TQFP | 100 | -40°C | 85°C | 901 K |
| IW4019BN | Quad AND/OR select gate, high-voltage silicon-gate CMOS | distributor | Plastic DIP | 16 | -55°C | 125°C | 126 K |
| SL4019BD | Quad AND/OR select gate. High-voltage silicon-gate CMOS. | distributor | SOIC | 16 | -55°C | 125°C | 43 K |
| SL4019BN | Quad AND/OR select gate. High-voltage silicon-gate CMOS. | distributor | DIP | 16 | -55°C | 125°C | 43 K |
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