| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HSH2001NIELO | Lamp for photolithography. Power 1750 watts, current 67 amps(DC), voltage 26 volts(DC). Temperature(at base) 220degC(max). | distributor | - | 2 | - | - | 41 K |
| HSH2001NIEO | Lamp for photolithography. Power 1750 watts, current 67 amps(DC), voltage 26 volts(DC). Temperature(at base) 220degC(max). | distributor | - | 2 | - | - | 51 K |
| HSH2501NILO | Lamp for photolithography. Power 2500 watts, current 109 amps(DC), voltage 23 volts(DC). Temperature(at base) 220degC(max). | distributor | - | 2 | - | - | 42 K |
| HV9901NG | 8-400V universal relay driver | distributor | SOIC | 16 | -40°C | 85°C | 75 K |
| LP0701N3 | 500V P-channel enhancement-mode lateral MOSFET | distributor | - | 3 | -55°C | 150°C | 32 K |
| LP0701ND | 500V P-channel enhancement-mode lateral MOSFET | distributor | Die | - | -55°C | 150°C | 32 K |
| P01N02LJA | N-channel logic level enhancement mode field effect transistor | distributor | - | 8 | -55°C | 150°C | 108 K |
| P01N02LMA | 25V; 1.2V N-channel logic level enhancement mode field effect transistor | distributor | - | 3 | -55°C | 150°C | 44 K |
| TN2501N8 | 18V N-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 476 K |
| TN2501ND | 18V N-channel enhancement-mode vertical DMOS FET | distributor | Die | 3 | -55°C | 150°C | 476 K |
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