| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N3023B | 13 volt zener diode | distributor | - | 2 | -65°C | 175°C | 21 K |
| 1N6023B | 500 milliwatts glass silicon zener diode, zener voltage 91V | Motorola | - | 2 | -65°C | 200°C | 424 K |
| BS616LV4023BC | 70/100ns 20mA 2.4-3.6V ultra low power/voltage CMOS SRAM 256K x 16 or 512K x 8bit switchable | distributor | BGA | 48 | 0°C | 70°C | 219 K |
| BS616LV4023BI | 70/100ns 20mA 2.4-3.6V ultra low power/voltage CMOS SRAM 256K x 16 or 512K x 8bit switchable | distributor | BGA | 48 | 0°C | 85°C | 219 K |
| BS616LV8023BC | 70/100ns 20mA 2.4-3.6V very low power/voltage CMOS SRAM 512K x 16 or 1M x 8bit switchable | distributor | BGA | 48 | 0°C | 70°C | 204 K |
| CD3023B | 13 volt zener diode | distributor | - | - | -65°C | 175°C | 113 K |
| IW4023BD | Triple 3-input NAND gate, high-voltage silicon-gate CMOS | distributor | SOIC | 14 | -55°C | 125°C | 108 K |
| IW4023BN | Triple 3-input NAND gate, high-voltage silicon-gate CMOS | distributor | Plastic DIP | 14 | -55°C | 125°C | 108 K |
| SL4023BD | Triple 3-input NAND gate. High-voltage silicon-gate CMOS. | distributor | SOIC | 14 | -55°C | 125°C | 30 K |
| SL4023BN | Triple 3-input NAND gate. High-voltage silicon-gate CMOS. | distributor | DIP | 14 | -55°C | 125°C | 30 K |
| [1] [2] [3] [4] 5 [6] |
|---|
