Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BS616LV2025AC | 70/55ns 40mA 4.5-5.5V ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable | distributor | BGA | 48 | 0°C | 70°C | 253 K |
BS616LV2025AI | 70/55ns 40mA 4.5-5.5V ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable | distributor | BGA | 48 | -40°C | 85°C | 253 K |
BS616LV2025DC | 70/55ns 40mA 4.5-5.5V ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable | distributor | DICE | 48 | 0°C | 70°C | 253 K |
BS616LV2025DI | 70/55ns 40mA 4.5-5.5V ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable | distributor | DICE | 48 | -40°C | 85°C | 253 K |
BS616LV4025BI | 70/55ns 45mA 4.5-5.5V ultra low power/voltage CMOS SRAM 256K x 16 or 512K x 8bit switchable | distributor | BGA | 48 | -40°C | 85°C | 190 K |
BS616LV4025DC | 70/55ns 45mA 4.5-5.5V ultra low power/voltage CMOS SRAM 256K x 16 or 512K x 8bit switchable | distributor | DICE | 48 | 0°C | 70°C | 190 K |
BS616LV4025DI | 70/55ns 45mA 4.5-5.5V ultra low power/voltage CMOS SRAM 256K x 16 or 512K x 8bit switchable | distributor | DICE | 48 | -40°C | 85°C | 190 K |
R6220255ES | 200V, 550A fast recovery single diode | distributor | - | - | - | - | 811 K |
R6220255ES | 200V, 550A fast recovery single diode | distributor | - | - | - | - | 811 K |
T510025004AQ | 200V, 50A phase control single thyristor | distributor | - | - | - | - | -- |
T510025004AQ | 200V, 50A phase control single thyristor | distributor | - | - | - | - | -- |
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