| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AME8802NEEV | Output voltage: 2.9V; 300mA CMOS LDO | distributor | - | 5 | -40°C | 85°C | 90 K |
| DE150-102N02A | RF power MOSFET | distributor | - | 6 | -55°C | 150°C | 77 K |
| DE275-102N06A | RF power MOSFET | distributor | - | 6 | -55°C | 150°C | 77 K |
| MX29F002NBPI-70 | Access time: 70ns; 2M-bit (256K x 8) CMOS flash memory | distributor | PDIP | 32 | -40°C | 85°C | 911 K |
| MX29F002NBQI-12 | Access time: 120ns; 2M-bit (256K x 8) CMOS flash memory | distributor | PLCC | 32 | -40°C | 85°C | 911 K |
| MX29F002NBQI-70 | Access time: 70ns; 2M-bit (256K x 8) CMOS flash memory | distributor | PLCC | 32 | -40°C | 85°C | 911 K |
| MX29F002NBQI-90 | Access time: 90ns; 2M-bit (256K x 8) CMOS flash memory | distributor | PLCC | 32 | -40°C | 85°C | 911 K |
| MX29F002NBTI-12 | Access time: 120ns; 2M-bit (256K x 8) CMOS flash memory | distributor | TSOP | 32 | -40°C | 85°C | 911 K |
| MX29F002NBTI-70 | Access time: 70ns; 2M-bit (256K x 8) CMOS flash memory | distributor | TSOP | 32 | -40°C | 85°C | 911 K |
| MX29F002NBTI-90 | Access time: 90ns; 2M-bit (256K x 8) CMOS flash memory | distributor | TSOP | 32 | -40°C | 85°C | 911 K |
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