Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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AME8802TEEV | Output voltage: 1.2V; 300mA CMOS LDO | distributor | - | 5 | -40°C | 85°C | 90 K |
EN29F002T45TI | 2 Megabit (256K x 8-bit) flach memory. Speed 45ns. 5.0V +-10% for both read/write operation. With RESET function. | distributor | TSOP | 32 | -40°C | 85°C | 267 K |
EN29F002T55JI | 2 Megabit (256K x 8-bit) flach memory. Speed 55ns. 5.0V +-10% for both read/write operation. With RESET function. | distributor | PLCC | 32 | -40°C | 85°C | 267 K |
EN29F002T55TI | 2 Megabit (256K x 8-bit) flach memory. Speed 55ns. 5.0V +-10% for both read/write operation. With RESET function. | distributor | TSOP | 32 | -40°C | 85°C | 267 K |
EN29F002T70TI | 2 Megabit (256K x 8-bit) flach memory. Speed 70ns. 5.0V +-10% for both read/write operation. With RESET function. | distributor | TSOP | 32 | -40°C | 85°C | 267 K |
EN29F002T90JI | 2 Megabit (256K x 8-bit) flach memory. Speed 90ns. 5.0V +-10% for both read/write operation. With RESET function. | distributor | PLCC | 32 | -40°C | 85°C | 267 K |
EN29F002T90TI | 2 Megabit (256K x 8-bit) flach memory. Speed 90ns. 5.0V +-10% for both read/write operation. With RESET function. | distributor | TSOP | 32 | -40°C | 85°C | 267 K |
HCT802TX | Dual enhancement mode MOSFET | distributor | Surface mount | 6 | -55°C | 150°C | 232 K |
HCT802TXV | Dual enhancement mode MOSFET | distributor | Surface mount | 6 | -55°C | 150°C | 232 K |
MX29F002TQI-12 | Access time: 120ns; 2M-bit (256K x 8) CMOS flash memory | distributor | PLCC | 32 | -40°C | 85°C | 911 K |
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