| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| EPA030C | 8-12V high efficiency heterojunction power FET | distributor | - | - | - | - | 38 K |
| KM416S8030BT-G/F10 | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 66 MHz (CL=2&3) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 133 K |
| KM416S8030BT-G/F8 | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 125 MHz (CL=3) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 133 K |
| KM416S8030BT-G/FA | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 133 MHz (CL=3) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 133 K |
| KM416S8030BT-G/FH | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 100 MHz (CL=2) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 133 K |
| KM416S8030BT-G/FL | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 100 MHz (CL=3) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 133 K |
| KM416S8030T-G/F10 | 2M x 16bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 116 K |
| KM416S8030T-G/FH | 2M x 16bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 116 K |
| KM416S8030T-G/FL | 2M x 16bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 116 K |
| MTV030N24 | On-screen-display with ayto-sizing controller | distributor | PDIP | 24 | 0°C | 70°C | 372 K |
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