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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
NDB6030LLength/Height 4.69 mm Width 10.54 mm Depth 15.49 mm Power dissipation 75 W Transistor polarity N Channel Current Id cont. 52 A Voltage Vgs th max. 3 V (D2-Pak) Voltage Vds max 30 VFairchild-Semiconductor----56 K
PDM4M4030S10AM64K x 32 CMOS static RAM moduledistributorSIMM640°C70°C270 K
PDM4M4030S10M64K x 32 CMOS static RAM moduledistributorSIMM640°C70°C270 K
PDM4M4030S12AM64K x 32 CMOS static RAM moduledistributorSIMM640°C70°C270 K
PDM4M4030S12M64K x 32 CMOS static RAM moduledistributorSIMM640°C70°C270 K
PDM4M4030S15AM64K x 32 CMOS static RAM moduledistributorSIMM640°C70°C270 K
PDM4M4030S15M64K x 32 CMOS static RAM moduledistributorSIMM640°C70°C270 K
PDM4M4030S20M64K x 32 CMOS static RAM moduledistributorSIMM640°C70°C270 K
PDM4M4030S25M64K x 32 CMOS static RAM moduledistributorSIMM640°C70°C270 K
SB1030CTSchottky barrier rectifier. Max recurrent peak reverse voltage 30.0 V. Max average forward rectified current at Tc = 90degC 10 A.distributor-3-50°C125°C39 K
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