Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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HYM72V8035GS-50 | 8M x 72bit EDO-DRAM module | Infineon-formely-Siemens | - | 168 | 0°C | 70°C | 65 K |
ZXM64N035GTA | 35 V N-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 5 | -55°C | 150°C | 101 K |
ZXM64N035GTA | 35 V N-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 5 | -55°C | 150°C | 101 K |
ZXM64N035GTC | 35 V N-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 5 | -55°C | 150°C | 101 K |
ZXM64N035GTC | 35 V N-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 5 | -55°C | 150°C | 101 K |
ZXM64P035GTA | 35 V P-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 5 | -55°C | 150°C | 101 K |
ZXM64P035GTA | 35 V P-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 5 | -55°C | 150°C | 101 K |
ZXM64P035GTC | 35 V P-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 5 | -55°C | 150°C | 101 K |
ZXM64P035GTC | 35 V P-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 5 | -55°C | 150°C | 101 K |
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