| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AD7703CN | -0.3 to +6V; 450mW; LC2MOS 20-bit A/D converter. For industrial process control, weigh scales, portable instrumentation, remote data acquisition | Analog-Devices | DIP | 20 | -40°C | 85°C | 206 K |
| AD7703CQ | -0.3 to +6V; 450mW; LC2MOS 20-bit A/D converter. For industrial process control, weigh scales, portable instrumentation, remote data acquisition | Analog-Devices | CERDIP | 20 | -40°C | 85°C | 206 K |
| KM44C4003CK-5 | 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 376 K |
| KM44C4003CK-6 | 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 376 K |
| KM44C4003CKL-5 | 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 376 K |
| KM44C4003CKL-6 | 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 376 K |
| PJ13003CK | Emitter base voltage:9V; base current:0.75Amp; NPN epitaxial silicon transistor | distributor | - | 3 | -20°C | 85°C | 153 K |
| PJ13003CT | Emitter base voltage:9V; base current:0.75Amp; NPN epitaxial silicon transistor | distributor | - | 3 | -20°C | 85°C | 153 K |
| VI-203CX | InputV:12V; outputV:24V; 50-200W; 10-40A; DC-DC converter | distributor | - | 9 | -25°C | 85°C | 37 K |
| VI-J03CX | InputV:12V; outputV:24V; 25-100W; DC-DC converter | distributor | - | 9 | -25°C | 100°C | 33 K |
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