Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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K4E160411D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung-Electronic | SOJ | 26 | 0°C | 70°C | 256 K |
K4E160411D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung-Electronic | SOJ | 24 | 0°C | 70°C | 256 K |
K4E160411D-F | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung-Electronic | - | 26 | 0°C | 70°C | 256 K |
K4E160411D-F | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung-Electronic | - | 24 | 0°C | 70°C | 256 K |
K4E170411D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung-Electronic | SOJ | 26 | 0°C | 70°C | 256 K |
K4E170411D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung-Electronic | SOJ | 24 | 0°C | 70°C | 256 K |
K4E170411D-F | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung-Electronic | - | 26 | 0°C | 70°C | 256 K |
K4E170411D-F | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung-Electronic | - | 24 | 0°C | 70°C | 256 K |
PDT0411-FC-A | Connectorized PIN photodiode | distributor | - | 3 | -40°C | 85°C | 154 K |
PDT0411-ST-F | Connectorized PIN photodiode | distributor | - | 3 | -40°C | 85°C | 154 K |
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