Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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K4S280432A-TC/L10 | 4M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 66 MHz (CL=2&3). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 109 K |
K4S280432A-TC/L1H | 4M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=2). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 109 K |
K4S280432A-TC/L1L | 4M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=3). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 109 K |
K4S280432A-TC/L75 | 4M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 133 MHz (CL=3). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 109 K |
K4S280432A-TC/L80 | 4M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 125 MHz (CL=3). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 109 K |
K4S280432C-TC/L1H | 4M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=2). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 112 K |
K4S280432C-TC/L1L | 4M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=3). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 112 K |
K4S280432C-TC/L75 | 4M x 8bit x 4 banks synchronous DRAM LVTTL. Max freq. 133 MHz (CL=3). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 112 K |
NJM2043D | Low-noise dual PRE-amplifier | New-Japan-Radio-Co--Ltd--JRC | DIP | 8 | -20°C | 75°C | 218 K |
NJM2043M | Low-noise dual PRE-amplifier | New-Japan-Radio-Co--Ltd--JRC | DMP | 8 | -20°C | 75°C | 218 K |
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