Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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AFM04P2-000 | Ka band power GaAs MESFET chip | distributor | - | - | -65°C | 150°C | 43 K |
AFM04P3-000 | Low noise/ medium power GaAs MESFET chip | distributor | - | - | -65°C | 150°C | 15 K |
AFM04P3-212 | Low noise/ medium power GaAs MESFET chip | distributor | - | - | -65°C | 150°C | 25 K |
AFM04P3-213 | Low noise/ medium power GaAs MESFET chip | distributor | - | - | -65°C | 150°C | 25 K |
BZW04P5V8 | Working peak reverse voltage: 5.80 V, 10 mA, 400 Wtransient voltage suppressor | distributor | - | 2 | -65°C | 175°C | 51 K |
IXDD404PI | 4Amp dual low-side ultrafast MOSFET driver | distributor | DIP | 8 | -45°C | 85°C | 666 K |
IXDF404PI | 4Amp dual low-side ultrafast MOSFET driver | distributor | DIP | 8 | -45°C | 85°C | 246 K |
IXDI404PI | 4Amp dual low-side ultrafast MOSFET driver | distributor | DIP | 8 | -45°C | 85°C | 246 K |
IXDN404PI | 4Amp dual low-side ultrafast MOSFET driver | distributor | DIP | 8 | -45°C | 85°C | 246 K |
SF1604PT | Reverse voltage: 200.00V; 16A super-fast glass passivated rectifier | distributor | - | 3 | -55°C | 150°C | 45 K |
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