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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
APT10050B2LC1000V, 21A power MOS VIAdvanced-Power-Technology-APT-3-55°C150°C68 K
APT10050B2VFR1000V, 21A power MOS VAdvanced-Power-Technology-APT-3-55°C150°C108 K
APT10050B2VR1000V, 21A power MOS VAdvanced-Power-Technology-APT-3-55°C150°C59 K
APT10050JVFR1000V, 19A power MOS VAdvanced-Power-Technology-APT-3-55°C150°C70 K
APT10050JVR1000V, 19A power MOS VAdvanced-Power-Technology-APT-3-55°C150°C67 K
APT10050LLC1000V, 21A power MOS VIAdvanced-Power-Technology-APT-3-55°C150°C68 K
APT10050LVFR1000V, 21A power MOS VAdvanced-Power-Technology-APT-3-55°C150°C108 K
APT10050LVR1000V, 21A power MOS VAdvanced-Power-Technology-APT-3-55°C150°C60 K
MF1050V-2SAW filter for wireless local loopMitsubishi-Electric-Corporation-Semiconductor-GroupSMD6-20°C75°C63 K
MTE2050-OH1Infrared emitter. Peak wavelength 880 nm.distributor-2-20°C100°C209 K
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