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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
EM83050HKeyboard encoderELAN-Microelectronics-Corp-DIP400°C70°C116 K
IRU1050CD5A low dropout positive adjustable regulatorInternational-Rectifier-20°C150°C105 K
IRU1050CD5A low dropout positive adjustable regulatorInternational-Rectifier-20°C150°C105 K
IRU1050CM5A low dropout positive adjustable regulatorInternational-Rectifier-30°C150°C105 K
IRU1050CP5A low dropout positive adjustable regulatorInternational-Rectifier-20°C150°C105 K
IRU1050CT5A low dropout positive adjustable regulatorInternational-Rectifier-30°C150°C105 K
MRF10502500 W, microwave power transistor NPN siliconM-A-COM---manufacturer-of-RF-3--142 K
OM6050SJ100V N-channel MOSFETdistributor-3-55°C150°C19 K
SR3050CSchottky barrier rectifier. Max recurrent peak reverse voltage 50V, max RMS voltage 35V, max DC blocking voltage 50V. Max average forward recftified current 30.0A at derating case temperaturedistributor-3-65°C150°C26 K
SR5050CSchottky barrier rectifier. Max recurrent peak reverse voltage 50V, max RMS voltage 35V, max DC blocking voltage 50V. Max average forward recftified current 50.0A at derating case temperaturedistributor-3-65°C150°C26 K
SR6050CSchottky barrier rectifier. Max recurrent peak reverse voltage 50V, max RMS voltage 35V, max DC blocking voltage 50V. Max average forward recftified current 60.0A at derating case temperaturedistributor-3-65°C150°C230 K
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