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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRFP064VHEXFET power MOSFET. VDSS = 60V, RDS(on) = 5.5mOhm, ID = 130AInternational-Rectifier-3-55°C175°C210 K
ISPLSI2064VL-100LB100100 MHz 2.5V in-system prommable superFAST high density PLDLattice-Semiconductor-CorporationCPGA100-55°C125°C188 K
ISPLSI2064VL-100LJ44100 MHz 2.5V in-system prommable superFAST high density PLDLattice-Semiconductor-CorporationPLCC44-55°C125°C188 K
ISPLSI2064VL-100LT100100 MHz 2.5V in-system prommable superFAST high density PLDLattice-Semiconductor-CorporationTQFP100-55°C125°C188 K
ISPLSI2064VL-100LT44100 MHz 2.5V in-system prommable superFAST high density PLDLattice-Semiconductor-CorporationTQFP44-55°C125°C188 K
ISPLSI2064VL-135LT100I100 MHz 2.5V in-system prommable superFAST high density PLDLattice-Semiconductor-CorporationTQFP100-55°C125°C188 K
ISPLSI2064VL-135LT100135 MHz 2.5V in-system prommable superFAST high density PLDLattice-Semiconductor-CorporationTQFP100-55°C125°C188 K
ISPLSI2064VL-135LT44I100 MHz 2.5V in-system prommable superFAST high density PLDLattice-Semiconductor-CorporationTQFP44-55°C125°C188 K
NJM064VJ-FET input operational amplifierNew-Japan-Radio-Co--Ltd--JRCDIP14-40°C85°C224 K
NJU7064VLow input offset voltage C-MOS operational amplifierNew-Japan-Radio-Co--Ltd--JRCSSOP14-20°C75°C163 K
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