| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 5962L9960702QUX | 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 5E4(50krad)(Si) | distributor | Ceramic flatpack | 36 | -40°C | 125°C | 127 K |
| 5962L9960703QUX | 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 5E4(50krad)(Si) | distributor | Ceramic flatpack | 36 | -55°C | 125°C | 127 K |
| 5962L9960703QUX | 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 5E4(50krad)(Si) | distributor | Ceramic flatpack | 36 | -55°C | 125°C | 127 K |
| 5962L9960704QUX | 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 5E4(50krad)(Si) | distributor | Ceramic flatpack | 36 | -40°C | 125°C | 127 K |
| 5962L9960704QUX | 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 5E4(50krad)(Si) | distributor | Ceramic flatpack | 36 | -40°C | 125°C | 127 K |
| APM2070PDC-TR | 20 V, P-channel enhancement mode MOSFET | distributor | - | 3 | -55°C | 150°C | 191 K |
| APM2070PDC-TRL | 20 V, P-channel enhancement mode MOSFET | distributor | - | 3 | -55°C | 150°C | 191 K |
| APM2070PDC-TU | 20 V, P-channel enhancement mode MOSFET | distributor | - | 3 | -55°C | 150°C | 191 K |
| APM2070PDC-TUL | 20 V, P-channel enhancement mode MOSFET | distributor | - | 3 | -55°C | 150°C | 191 K |
| APM2070PUC-TR | 20 V, P-channel enhancement mode MOSFET | distributor | - | 3 | -55°C | 150°C | 264 K |
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