Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1N4080A | 120 volt temperature compensated zener reference diode | distributor | - | 2 | -65°C | 175°C | 50 K |
EFA080A | 8-12V low distortion GaAs power FET | distributor | - | - | - | - | 35 K |
EFA080A-100F | 8-12V low distortion GaAs power FET | distributor | - | - | - | - | 33 K |
EFA080A-70 | 5-8V low distortion GaAs power FET | distributor | - | - | - | - | 25 K |
EPA080A | 8-12V high efficiency heterojunction power FET | distributor | - | - | - | - | 39 K |
EPA080A-100F | 8-12V high efficiency heterojunction power FET | distributor | - | - | - | - | 33 K |
EPA080A-70 | 5-8V high efficiency heterojunction power FET | distributor | - | - | - | - | 22 K |
LM3080AN | Operational transconductance amplifier | distributor | DIP | 8 | 0°C | 70°C | 188 K |
SR1080A | Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 80 V. Max average forward rectified current 10.0 A. | distributor | - | 2 | -65°C | 150°C | 179 K |
SRF1080A | Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 80 V. Max average forward rectified current 10.0 A. | distributor | - | 3 | -65°C | 150°C | 170 K |
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