Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2N7081-220M-ISO | 100V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO257AB(TO220M) | - | - | - | 14 K |
AM29LV081-100EE | 8 megabit CMOS 3.0 volt-only uniform sector flash memory | AMD-Advanced-Micro-Devices | TSOP | 40 | -55°C | 125°C | 439 K |
AM29LV081-100EEB | 8 megabit CMOS 3.0 volt-only uniform sector flash memory | AMD-Advanced-Micro-Devices | TSOP | 40 | -55°C | 125°C | 439 K |
AM29LV081-120EE | 8 megabit CMOS 3.0 volt-only uniform sector flash memory | AMD-Advanced-Micro-Devices | TSOP | 40 | -55°C | 125°C | 439 K |
CLV0815E | 806-824 MHz VCO (Voltage Controlled Oscillator) | Z-Communications-Inc- | - | - | -30°C | 85°C | 163 K |
CLV0815E | 806-824 MHz VCO (Voltage Controlled Oscillator) | Z-Communications-Inc- | - | - | -30°C | 85°C | 163 K |
D2081UK | 28V, 0.75W, 1MHz-1000MHz single-edded RF | Semelab-Plc- | SOT223 | - | - | - | 25 K |
NJU7081M | Single low voltage C-MOS power amplifier | New-Japan-Radio-Co--Ltd--JRC | DMP | 8 | -20°C | 75°C | 166 K |
PGE60816 | EDFA gain block for DWDM applications | Ericsson-Microelectronics | - | 28 | -5°C | 70°C | 285 K |
PGE60817 | EDFA gain block for DWDM applications | Ericsson-Microelectronics | - | 28 | -5°C | 70°C | 285 K |
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