| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N4082A | 0TC Reference Voltage Zener | Microsemi-Corporation | EE | - | - | - | 78 K |
| 2SK1082-01 | N-channel silicon power MOSFET | distributor | - | 3 | - | - | 1 M |
| 2SK2082-01 | N-channel MOSFET | distributor | - | 3 | - | - | 214 K |
| GBIT0824C | Transient Voltage Suppressor | Microsemi-Corporation | SOIC8 | - | - | - | 179 K |
| IDT70825S20G | High-speed 8K x 16 sequential access random access memory | Integrated-Device-Technology-Inc- | PGA | 84 | 0°C | 70°C | 319 K |
| IDT70825S25G | High-speed 8K x 16 sequential access random access memory | Integrated-Device-Technology-Inc- | PGA | 84 | 0°C | 70°C | 319 K |
| IDT70825S35G | High-speed 8K x 16 sequential access random access memory | Integrated-Device-Technology-Inc- | PGA | 84 | 0°C | 70°C | 319 K |
| IDT70825S35GB | High-speed 8K x 16 sequential access random access memory | Integrated-Device-Technology-Inc- | PGA | 84 | -55°C | 105°C | 319 K |
| IDT70825S45G | High-speed 8K x 16 sequential access random access memory | Integrated-Device-Technology-Inc- | PGA | 84 | 0°C | 70°C | 319 K |
| IDT70825S45GB | High-speed 8K x 16 sequential access random access memory | Integrated-Device-Technology-Inc- | PGA | 84 | -55°C | 105°C | 319 K |
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