| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ADC0820BCN | CMOS high speed 8-bit A/D converter with track/hold function. INL(LSB) +-1/2 | Maxim-Integrated-Producs | Plastic DIP | 20 | 0°C | 70°C | 261 K |
| ADC0820CC/D | CMOS high speed 8-bit A/D converter with track/hold function. INL(LSB) +-1. | Maxim-Integrated-Producs | Dice | - | 0°C | 70°C | 261 K |
| ADC0820CCN | CMOS high speed 8-bit A/D converter with track/hold function. INL(LSB) +-1. | Maxim-Integrated-Producs | Plastic DIP | 20 | 0°C | 70°C | 261 K |
| ILC7082AIK-285 | 150mA Ultra low noise CMOS RF-LDO regulator | distributor | SOIC | 8 | -40°C | 85°C | 333 K |
| ILC7082AIK-33 | 150mA Ultra low noise CMOS RF-LDO regulator | distributor | SOIC | 8 | -40°C | 85°C | 333 K |
| K4S160822DT-G/F10 | 1M x 8bit x 2 banks synchronous DRAM. 2M x 8 SDRAM. Max freq. 100 MHz, interface LVTTL. | Samsung-Electronic | TSOP (II) | 44 | 0°C | 70°C | 1 M |
| K4S160822DT-G/F7 | 1M x 8bit x 2 banks synchronous DRAM. 2M x 8 SDRAM. Max freq. 143 MHz, interface LVTTL. | Samsung-Electronic | TSOP (II) | 44 | 0°C | 70°C | 1 M |
| K4S160822DT-G/F8 | 1M x 8bit x 2 banks synchronous DRAM. 2M x 8 SDRAM. Max freq. 125 MHz, interface LVTTL. | Samsung-Electronic | TSOP (II) | 44 | 0°C | 70°C | 1 M |
| K4S160822DT-G/FH | 1M x 8bit x 2 banks synchronous DRAM. 2M x 8 SDRAM. Max freq. 100 MHz, interface LVTTL. | Samsung-Electronic | TSOP (II) | 44 | 0°C | 70°C | 1 M |
| K4S160822DT-G/FL | 1M x 8bit x 2 banks synchronous DRAM. 2M x 8 SDRAM. Max freq. 100 MHz, interface LVTTL. | Samsung-Electronic | TSOP (II) | 44 | 0°C | 70°C | 1 M |
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