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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MA4P709-2231500 V, PIN diode chipM-A-COM---manufacturer-of-RF---65°C175°C506 K
MLO80100-00940920-960 MHz, Surface mount voltage controlled oscillator EGSMM-A-COM---manufacturer-of-RFLSM4-20°C70°C100 K
MLS9109-00881CDMA 869-894 MHz, Surface mount frequency synthesizerM-A-COM---manufacturer-of-RFSMT12-40°C85°C--
MRF1090MB90 W, microwave power transistor NPN siliconM-A-COM---manufacturer-of-RF-4--120 K
PH1090-15L1030-1090 MHz,15 Watt, avionics pulsed power transistorM-A-COM---manufacturer-of-RF----91 K
PH1090-175L1030-1090 MHz,175 W, 250 ms pulse,avionic pulsed power transistorM-A-COM---manufacturer-of-RF----41 K
PH1090-350L1030-1090 MHz,350 W, 250 ms pulse,avionic pulsed power transistorM-A-COM---manufacturer-of-RF----62 K
PH1090-550S1030-1090 MHz,550 W, 10 ms pulse,avionic pulsed power transistorM-A-COM---manufacturer-of-RF----64 K
PH1090-700B1030-1090 MHz,700 W, 32 ms pulse,avionic pulsed power transistorM-A-COM---manufacturer-of-RF----263 K
PH1090-75L1030-1090 MHz,75 W, 250 ms pulse,avionic pulsed power transistorM-A-COM---manufacturer-of-RF----90 K
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