| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2020-6609-10 | 2-4 GHz, directional couplers mini, octave bandwidth | M-A-COM---manufacturer-of-RF | - | - | - | - | 192 K |
| AT10-0009-TB | 800-1000 MHz, voltage variable absorptive attenuator | M-A-COM---manufacturer-of-RF | SOW | 16 | -40°C | 85°C | 236 K |
| AT10-0009TR | 800-1000 MHz, voltage variable absorptive attenuator | M-A-COM---manufacturer-of-RF | SOW | 16 | -40°C | 85°C | 236 K |
| AT10-0009TR | 800-1000 MHz, voltage variable absorptive attenuator | M-A-COM---manufacturer-of-RF | SOW | 16 | -40°C | 85°C | 236 K |
| AT65-0009-TB | 824-960 MHz, voltage variable attenuator | M-A-COM---manufacturer-of-RF | SOT | 5 | -40°C | 85°C | 225 K |
| AT65-0009TR | 824-960 MHz, voltage variable attenuator | M-A-COM---manufacturer-of-RF | SOT | 5 | -40°C | 85°C | 225 K |
| DR65-0109TR | Single driver for GaAs FET switches and attenuator | M-A-COM---manufacturer-of-RF | SO | 8 | -40°C | 85°C | 213 K |
| DT65-0009-TB | 840-2200 MHz positive output plastic detector | M-A-COM---manufacturer-of-RF | SO | 14 | -40°C | 85°C | 216 K |
| IRF7809AV | HEXFET power MOSFET. VDS = 30V, RDS(on) = 7.0mOhm | International-Rectifier | SO | 8 | -55°C | 150°C | 114 K |
| IRU1209CS | 1A very low dropout positive adjustable regulator | International-Rectifier | SOIC | 8 | 0°C | 125°C | 114 K |
| << [345] [346] [347] [348] [349] 350 [351] [352] [353] [354] [355] >> |
|---|
