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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
APT10040B2VFR1000V, 25A power MOS VAdvanced-Power-Technology-APT-3-55°C150°C40 K
APT10040B2VR1000V, 25A power MOS VAdvanced-Power-Technology-APT-3-55°C150°C39 K
APT10050B2LC1000V, 21A power MOS VIAdvanced-Power-Technology-APT-3-55°C150°C68 K
APT10050B2VFR1000V, 21A power MOS VAdvanced-Power-Technology-APT-3-55°C150°C108 K
APT10050B2VR1000V, 21A power MOS VAdvanced-Power-Technology-APT-3-55°C150°C59 K
APT100GF60B2R600V, 100A fast IGBTAdvanced-Power-Technology-APT-3-55°C150°C38 K
APT12060B2VR1200V, 20A power MOS V transistorAdvanced-Power-Technology-APT-3-55°C150°C39 K
APT33GF120B2RD1200V, 52A fast IGBT and FREDAdvanced-Power-Technology-APT-3-55°C150°C141 K
SML60B21600V Vdss N-Channel FET (field effect transistor)Semelab-Plc-TO247AD---21 K
SML60B25600V Vdss N-Channel FET (field effect transistor)Semelab-Plc-TO247AD---21 K
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