| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGT1S20N60B3S | 600V N-channel IGBT, 40A | Fairchild-Semiconductor | - | 3 | -40°C | 150°C | 197 K |
| HGT1S20N60C3RS | TRANSISTOR IGBT | Fairchild-Semiconductor | - | - | - | - | 107 K |
| HGT1S20N60C3RS | TRANSISTOR IGBT | Fairchild-Semiconductor | - | - | - | - | 107 K |
| HGTG20N60B3 | 600V N-channel IGBT, 40A | Fairchild-Semiconductor | - | 3 | -40°C | 150°C | 197 K |
| HGTP20N60B3 | TRANSISTOR IGBT TO-220 | Fairchild-Semiconductor | - | - | - | - | 138 K |
| HGTP20N60C3R | TRANSISTOR IGBT TO-262 | Fairchild-Semiconductor | - | - | - | - | 107 K |
| IXKF40N60SCD1 | 600V coolMOS power MOSFET | distributor | - | 3 | -55°C | 150°C | 34 K |
| IXKR40N60C | 600V coolMOS power MOSFET | distributor | ISOPLUS247 | 3 | -40°C | 150°C | 46 K |
| PHW10N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 115 K |
| PHW10N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 115 K |
| SSS10N60B | 600V N-channel MOSFET, 600V, 6A | Fairchild-Semiconductor | - | 3 | -55°C | 150°C | 909 K |
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