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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
M27C256B-10N6TR256 Kbit (32Kb x 8) EPROM, 5V, 100nsSGS-Thomson-MicroelectronicsTSOP28-40°C85°C107 K
M27C256B-20N6TR256 Kbit (32Kb x 8) EPROM, 5V, 200nsSGS-Thomson-MicroelectronicsTSOP28-40°C85°C107 K
M27C256B-60N6TR256 Kbit (32Kb x 8) EPROM, 5V, 60nsSGS-Thomson-MicroelectronicsTSOP28-40°C85°C107 K
M27C256B-70N6TR256 Kbit (32Kb x 8) EPROM, 5V, 70nsSGS-Thomson-MicroelectronicsTSOP28-40°C85°C107 K
M27C256B-80N6TR256 Kbit (32Kb x 8) EPROM, 5V, 80nsSGS-Thomson-MicroelectronicsTSOP28-40°C85°C107 K
M27C256B-90N6TR256 Kbit (32Kb x 8) EPROM, 5V, 90nsSGS-Thomson-MicroelectronicsTSOP28-40°C85°C107 K
M27C512-10N6TR512 Kbit (64Kb x 8) EPROM, 5V, 100nsSGS-Thomson-MicroelectronicsTSOP28-40°C85°C114 K
M27C512-20N6TR512 Kbit (64Kb x 8) EPROM, 5V, 200nsSGS-Thomson-MicroelectronicsTSOP28-40°C85°C114 K
M27C512-90N6TR512 Kbit (64Kb x 8) EPROM, 5V, 90nsSGS-Thomson-MicroelectronicsTSOP28-40°C85°C114 K
PHW10N60E600 V, power MOS transistor avalanche energy ratedPhilips-SemiconductorsSOT3-55°C150°C115 K
PHW10N60E600 V, power MOS transistor avalanche energy ratedPhilips-SemiconductorsSOT3-55°C150°C115 K
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