| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1SS295 | Schottky barrier diode for UHF band mixer applications | Toshiba | - | 3 | -55°C | 125°C | 109 K |
| 1SS348 | Scottky barrier diode for low voltage high speed switching applications | Toshiba | - | 3 | -40°C | 100°C | 110 K |
| 1SS349 | Scottky barrier diode for low voltage high speed switching applications | Toshiba | - | 3 | -40°C | 100°C | 109 K |
| 1SS352 | Silicon diode for ultra high speed switching applications | Toshiba | - | 2 | -55°C | 125°C | 121 K |
| 1SS385 | Schottky barrier diode for high speed switching applications | Toshiba | - | 3 | -40°C | 100°C | 124 K |
| 1SS387 | Silicon diode for ultra high speed switching applications | Toshiba | - | 2 | -55°C | 125°C | 125 K |
| 1SS388 | Schottky barrier diode for high speed switching applications | Toshiba | - | 2 | -40°C | 100°C | 123 K |
| 1SV214 | Variable capacitance silicon diode for TV tuning | Toshiba | - | 2 | -55°C | 125°C | 111 K |
| 1SV215 | Variable capacitance silicon diode for CATV tuning | Toshiba | - | 2 | -55°C | 125°C | 109 K |
| 1SV216 | Variable capacitance silicon diode for TV VHF UHF tuner AFC | Toshiba | - | 2 | -55°C | 125°C | 110 K |
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