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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
BCX51-10PNP medium power transistor.Philips-SemiconductorsSOT893-65°C150°C58 K
BUK481-100APowerMOS transistor.Philips-SemiconductorsSOT22340°C150°C71 K
BUK581-100APowerMOS transistor. Logic level FET.Philips-SemiconductorsSOT22340°C150°C75 K
G5851-103Reverse voltage:2V; spectral response range:0.9-1.7um; InGaAs PIN photodiode: long wavelength type. For NIR (near infrared) photometry, optical power meter, gas analyzerdistributor-3-40°C85°C169 K
H8711-10Spectral responce:300 to 650nm; supplu voltage: 1000V; multianode photomultiplier tube assemblydistributor---30°C50°C86 K
L7141-10Forward current:40mA; 5V; red LED/photo IC for 50 Mbps optical linkdistributor-4-10°C70°C268 K
P4631-10Active area size:1x1mm; rated input voltage:+-15 +-0.5V; infrared detector mudule with preamp thermoelectrically cooled type: easy-to-use detector module with built-in preamplifier. For infrared detection and CO2 laser detectiondistributor--0°C40°C117 K
SMV1411-10250mW; silicon hyperabrupt tuning diodedistributorSOT23--55°C125°C37 K
SMV20411-102.5V; 250mW; surface mount 2042/2041 series varactor hyperabrupt tuning diodedistributorSOT23--55°C125°C36 K
STK401-1002-channel, 60+60W AF power amplifier (split power supply)SANYO-Electric-Co--Ltd-SIP16-30°C125°C184 K
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