| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2085-6010-00 | 1-18 GHz, back diode detector | M-A-COM---manufacturer-of-RF | - | 2 | -65°C | 100°C | 157 K |
| 2086-6010-00 | 1-18 GHz, biased and zero biased schottky detector | M-A-COM---manufacturer-of-RF | - | 2 | - | - | 314 K |
| AT10-0009 | 800-1000 MHz, voltage variable absorptive attenuator | M-A-COM---manufacturer-of-RF | SOW | 16 | -40°C | 85°C | 236 K |
| AT10-0009-TB | 800-1000 MHz, voltage variable absorptive attenuator | M-A-COM---manufacturer-of-RF | SOW | 16 | -40°C | 85°C | 236 K |
| AT10-0009TR | 800-1000 MHz, voltage variable absorptive attenuator | M-A-COM---manufacturer-of-RF | SOW | 16 | -40°C | 85°C | 236 K |
| AT10-0009TR | 800-1000 MHz, voltage variable absorptive attenuator | M-A-COM---manufacturer-of-RF | SOW | 16 | -40°C | 85°C | 236 K |
| AT10-0017 | 1700-2000 MHz, voltage variable absorptive attenuator | M-A-COM---manufacturer-of-RF | SOW | 16 | -40°C | 85°C | 220 K |
| AT10-0017-TB | 1700-2000 MHz, voltage variable absorptive attenuator | M-A-COM---manufacturer-of-RF | SOW | 16 | -40°C | 85°C | 220 K |
| AT10-0017TR | 1700-2000 MHz, voltage variable absorptive attenuator | M-A-COM---manufacturer-of-RF | SOW | 16 | -40°C | 85°C | 220 K |
| AT10-0019-TB | 50-1000 MHz, PIN diode based variable attenuator | M-A-COM---manufacturer-of-RF | SOW | 16 | -40°C | 85°C | 220 K |
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