Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BUK9510-30 | TrenchMOS transistor. Logic level FET. | Philips-Semiconductors | TO220AB | 3 | -55°C | 175°C | 60 K |
BUK9610-30 | TrenchMOS transistor. Logic level FET. | Philips-Semiconductors | SOT404 | 3 | -55°C | 175°C | 65 K |
BYC10-600 | Rectifier diode ultrafast, low switching loss. | Philips-Semiconductors | SOD59 | 2 | 0°C | 150°C | 58 K |
E10-40 | Input voltage:9-36 VDC;output voltage 3.3 VDC;output current:0-2000 mA;input current 15-362 mA; 10 W wide input DC to DC converter | distributor | - | 5 | -25°C | 71°C | 51 K |
E10-41 | Input voltage:9-36 VDC;output voltage 5 VDC;output current:100-2000 mA;input current 30-1100 mA; 10 W wide input DC to DC converter | distributor | - | 5 | -25°C | 71°C | 51 K |
E10-50 | Input voltage:18-72 VDC;output voltage 3.3 VDC;output current:0-2000 mA;input current 15-362 mA; 10 W wide input DC to DC converter | distributor | - | 5 | -25°C | 71°C | 51 K |
E10-51 | Input voltage:18-72 VDC;output voltage 5 VDC;output current:100-2000 mA;input current 30-1100 mA; 10 W wide input DC to DC converter | distributor | - | 5 | -25°C | 71°C | 51 K |
uPD45128163G5-A10-9JF | 128M-bit synchronous DRAM, organization 2M x 16 x 4, LVTTL, 10ns, 3.3V | distributor | TSOP II | 54 | 0°C | 70°C | 682 K |
uPD45128441G5-A10-9JF | 128M-bit synchronous DRAM, organization 8M x 4 x 4, LVTTL, 10ns, 3.3V | distributor | TSOP II | 54 | 0°C | 70°C | 682 K |
uPD45128841G5-A10-9JF | 128M-bit synchronous DRAM, organization 4M x 8 x 4, LVTTL, 10ns, 3.3V | distributor | TSOP II | 54 | 0°C | 70°C | 682 K |
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