| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SA1610-T1 | Silicon transistor | NEC-Electronics-Inc- | - | - | - | - | 271 K |
| 2SA1610-T2 | Silicon transistor | NEC-Electronics-Inc- | - | - | - | - | 271 K |
| 2SC5010-T1/-T2 | NPN epitaxial-type silicon transistor | NEC-Electronics-Inc- | - | - | - | - | 61 K |
| 2SJ210-L | P-channel MOS FET | NEC-Electronics-Inc- | - | - | - | - | 365 K |
| 2SJ210-T1B | P-channel MOS FET | NEC-Electronics-Inc- | - | - | - | - | 365 K |
| 2SJ210-T2B | P-channel MOS FET | NEC-Electronics-Inc- | - | - | - | - | 365 K |
| 2SJ210-T2B | P-channel MOS FET | NEC-Electronics-Inc- | - | - | - | - | 365 K |
| SB10-09T | Schottky barrier diode, 90V/1A rectifier | SANYO-Electric-Co--Ltd- | 1255A | 3 | - | - | 81 K |
| SB10-18 | Schottky barrier diode, 80V/1A rectifier | SANYO-Electric-Co--Ltd- | 1159B | 3 | - | - | 118 K |
| SB10-18K | Schottky barrier diode, 180V/1A rectifier | SANYO-Electric-Co--Ltd- | 1199C | 3 | - | - | 85 K |
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