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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
AT27C010-12JC1Megabit(128K x 8) OTP CMOS EPROM,35mA maxATMEL-CorporationPLCC320°C70°C256 K
AT27C010-12PC1Megabit(128K x 8) OTP CMOS EPROM,35mA maxATMEL-CorporationPDIP320°C70°C256 K
AT27C010-12TC1Megabit(128K x 8) OTP CMOS EPROM,35mA maxATMEL-CorporationTSOP320°C70°C256 K
AT28C010-12DM/8831 Megabit (128K x 8) paged CMOS EPROMATMEL-Corporationcer DIP32-55°C125°C657 K
AT28C010-12EM/8831 Megabit (128K x 8) paged CMOS EPROMATMEL-CorporationLCC32-55°C125°C657 K
AT28C010-12FM/8831 Megabit (128K x 8) paged CMOS EPROMATMEL-CorporationFlatpack32-55°C125°C657 K
AT28C010-12LM/8831 Megabit (128K x 8) paged CMOS EPROMATMEL-CorporationLCC44-55°C125°C657 K
AT28C010-12UM/8831 Megabit (128K x 8) paged CMOS EPROMATMEL-CorporationPGA30-55°C125°C657 K
VMB10-12FNPN silicon RF power transistorAdvanced-Semiconductor-Inc--4-65°C200°C17 K
VMB10-12SNPN silicon RF power transistorAdvanced-Semiconductor-Inc--4-65°C200°C16 K
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