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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
BUK7610-3030 V, tranch MOS transistor standard level FETPhilips-SemiconductorsSOT3-55°C175°C53 K
BUK9510-3030 V, tranch MOS transistor logic level FETPhilips-SemiconductorsSOT3-55°C175°C49 K
BUK9610-3030 V, tranch MOS transistor logic level FETPhilips-SemiconductorsSOT3-55°C175°C52 K
BYV10-30Schottky barrier diode. Repetitive peak reverse voltage 30 V.Philips-SemiconductorsSOD8120°C125°C26 K
BYV10-30Schottky barrier diode. Repetitive peak reverse voltage 30 V.Philips-SemiconductorsSOD8120°C125°C26 K
NX29F010-35PL35 ns, 5 V, 1M-bit CMOS ultra-fast sectored flash memorydistributorPLCC320°C70°C377 K
NX29F010-35T35 ns, 5 V, 1M-bit CMOS ultra-fast sectored flash memorydistributorTSOP320°C70°C377 K
uPD70108GC-10-3B616-bit MOS microprocessor, 10MHzNEC-Electronics-Inc-PQFP52-40°C85°C4 M
uPD70108HGC-10-3B616-bit MOS microprocessor, 10MHzNEC-Electronics-Inc-PQFP52-40°C85°C5 M
uPD70116HGC-10-3B616-bit MOS microprocessor, 10MHzNEC-Electronics-Inc-PQFP52-40°C85°C5 M
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