| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ispLSI1032E-100LJ | In-system programmable high density PLD, 10ns | Lattice-Semiconductor-Corporation | PLCC | 84 | 0°C | 70°C | 164 K |
| ispLSI1032E-100LT | In-system programmable high density PLD, 10ns | Lattice-Semiconductor-Corporation | TQFP | 100 | 0°C | 70°C | 164 K |
| KM416V4100CS-45 | 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 88 K |
| KM416V4100CS-5 | 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 88 K |
| KM416V4100CS-6 | 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 88 K |
| M27W202-100B6 | 2 Mbit (128Kb x16) low voltage UV EPROM, 100ns | SGS-Thomson-Microelectronics | PDIP | 40 | -40°C | 85°C | 157 K |
| M27W202-100F6 | 2 Mbit (128Kb x16) low voltage UV EPROM, 100ns | SGS-Thomson-Microelectronics | FDIP | 40 | -40°C | 85°C | 157 K |
| M27W202-100K6TR | 2 Mbit (128Kb x16) low voltage UV EPROM, 100ns | SGS-Thomson-Microelectronics | PLCC | 44 | -40°C | 85°C | 157 K |
| M27W202-100N6TR | 2 Mbit (128Kb x16) low voltage UV EPROM, 100ns | SGS-Thomson-Microelectronics | TSOP | 40 | -40°C | 85°C | 157 K |
| pLSI1032E-100LJ | High density programmable logic, 10ns | Lattice-Semiconductor-Corporation | PLCC | 84 | 0°C | 70°C | 212 K |
| pLSI1032E-100LJ | High density programmable logic, 10ns | Lattice-Semiconductor-Corporation | PLCC | 84 | 0°C | 70°C | 212 K |
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