Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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MRF10070 | Microwave pulse power transistor | Motorola | - | 3 | - | - | 97 K |
MTB1N100E | TMOS E-FET high energy power FET | Motorola | DPAK | 4 | -55°C | 150°C | 256 K |
MTB3N100E | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 262 K |
MTP1N100E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 203 K |
MTP3N100E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 206 K |
MTV10N100E | TMOS E-FET power field effect transistor D3PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 269 K |
MTV6N100E | TMOS E-FET power field effect transistor D3PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 262 K |
MTW10N100E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | Motorola | - | 4 | -55°C | 150°C | 192 K |
MTW6N100E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | Motorola | - | 4 | -55°C | 150°C | 195 K |
MTY100N10E | TMOS E-FET power field effect transistor | Motorola | - | 3 | -55°C | 150°C | 216 K |
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