| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CM1000HA-24H | 1000 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 49 K |
| CM1000HA-28H | 1000 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 54 K |
| CM1000HA-28H | 1000 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 54 K |
| CM100BU-12H | 100 Amp IGBT module for high power switching use insolated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 47 K |
| CM100DU-12H | 100 Amp IGBT module for high power switching use insolated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 51 K |
| CM100DU-24H | 100 Amp IGBT module for high power switching use insolated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 45 K |
| CM100E3U-24H | 100 Amp IGBT module for high power switching use insolated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | -40°C | 150°C | 44 K |
| MJ10022 | 40A NPN silicon power darlington transistor | distributor | - | 2 | -65°C | 200°C | 202 K |
| MJ10023 | 40A NPN silicon power darlington transistor | distributor | - | 2 | -65°C | 200°C | 202 K |
| MJ10024 | 20A NPN silicon power darlington transistor | distributor | - | 2 | -65°C | 200°C | 205 K |
| MJ10025 | 20A NPN silicon power darlington transistor | distributor | - | 2 | -65°C | 200°C | 205 K |
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