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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
APL1001J1000V, 18A power MOS IV transistorAdvanced-Power-Technology-APT-3-55°C150°C37 K
APL1001P1000V, 18A, power MOS IV transistorAdvanced-Power-Technology-APT-3-55°C150°C115 K
T8100A-BAL-DBH.100/H.110 interface and time-slot interchangerdistributorPBGA217-40°C85°C1 M
T8100A-BAL3-DBH.100/H.110 interface and time-slot interchangerdistributorPBGA217-40°C85°C1 M
T8100A-SC-DBH.100/H.110 interface and time-slot interchangerdistributorSQFP2080°C70°C1 M
T8100A-SC3-DBH.100/H.110 interface and time-slot interchangerdistributorSQFP2080°C70°C1 M
TLOE1002AToshiba LED lamp. Peak emission wavelength 612 nm. Color orange. Lumin. int. typ. 150 mcd.distributor---25°C85°C539 K
TLRE1002AToshiba LED lamp. Dominant wavelength 644 nm. Color red. Lumin. int. typ. 70 mcd.distributor---25°C85°C539 K
TLSE1002AToshiba LED lamp. Peak emission wavelength 623 nm. Color red. Lumin. int. typ. 135 mcd.distributor---25°C85°C539 K
TLYE1002AToshiba LED lamp. Peak emission wavelength 590 nm. Color yellow. Lumin. int. typ. 105 mcd.distributor---25°C85°C539 K
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